amplifier transistors maximum ratings rating symbol mps650 mps750 mps651 mps751 unit collectoremitter voltage v ce 40 60 vdc collectorbase voltage v cb 60 80 vdc emitterbase voltage v eb 5.0 vdc collector current e continuous i c 2.0 adc total power dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total power dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watt mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (1) (i c = 10 madc, i b = 0) mps650, mps750 mps651, mps751 v (br)ceo 40 60 e e vdc collectorbase breakdown voltage (i c = 100 m adc, i e = 0 ) mps650, mps750 mps651, mps751 v (br)cbo 60 80 e e vdc emitterbase breakdown voltage (i c = 0, i e = 10 m adc) v (br)ebo 5.0 e vdc collector cutoff current (v cb = 60 vdc, i e = 0) mps650, mps750 (v cb = 80 vdc, i e = 0) mps651, mps751 i cbo e e 0.1 0.1 m adc emitter cutoff current (v eb = 4.0 v, i c = 0) i ebo e 0.1 m adc 1. pulse test: pulse width 300 s, duty cycle = 2.0%. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 1 publication order number: mps650/d npn mps650 mps651 pnp mps750 mps751 *on semiconductor preferred devices * case 2910, style 1 to92 (to226al) 1 2 3 * voltage and current are negative for pnp transistors collector 3 2 base 1 emitter collector 3 2 base 1 emitter npn pnp
npn mps650 mps651 pnp mps750 mps751 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (1) dc current gain (i c = 50 ma, v ce = 2.0 v) (i c = 500 ma, v ce = 2.0 v) (i c = 1.0 a, v ce = 2.0 v) (i c = 2.0 a, v ce = 2.0 v) h fe 75 75 75 40 e e e e e collectoremitter saturation voltage (i c = 2.0 a, i b = 200 ma) (i c = 1.0 a, i b = 100 ma) v ce(sat) e e 0.5 0.3 vdc baseemitter on voltage (i c = 1.0 a, v ce = 2.0 v) v be(on) e 1.0 vdc baseemitter saturation voltage (i c = 1.0 a, i b = 100 ma) v be(sat) e 1.2 vdc smallsignal characteristics currentgain e bandwidth product (2) (i c = 50 madc, v ce = 5.0 vdc, f = 100 mhz) f t 75 e mhz 1. pulse test: pulse width 300 s, duty cycle = 2.0%. 2. f t is defined as the frequency at which |h fe | extrapolates to unity. figure 1.
npn mps650 mps651 pnp mps750 mps751 http://onsemi.com 3 figure 1. mps650, mps651 typical dc current gain i c , collector current (ma) 10 h fe , dc current gain 300 0 v ce = 2.0 v t j = 125 c 25 c -55 c npn i c , collector current (ma) -10 -20 -50 -100 -200 -500 h fe , dc current gain 250 0 pnp 30 60 90 120 150 180 210 240 270 20 50 100 200 500 1.0 a 2.0 a 4.0 a 25 50 75 100 125 200 175 150 225 -1.0 a -2.0 a -4.0 a v ce = -2.0 v t j = 125 c 25 c -55 c i c , collector current (ma) 50 v, voltage (volts) 2.0 0 v be(sat) @ i c /i b = 10 v be(on) @ v ce = 2.0 v v ce(sat) @ i c /i b = 10 figure 2. mps750, mps751 typical dc current gain figure 3. mps650, mps651 on voltages 1.8 1.6 1.4 1.2 1.0 0.4 0.8 0.6 0.2 100 200 500 1.0 a 2.0 a 4.0 a npn i c , collector current (ma) v, voltage (volts) 0 figure 4. mps750, mps751 on voltages -50 -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.4 -0.8 -0.6 -0.2 -100 -200 -500 -1.0 a -2.0 a -4.0 a v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 pnp v be(on) @ v ce = 2.0 v
npn mps650 mps651 pnp mps750 mps751 http://onsemi.com 4 figure 5. mps650, mps651 collector saturation region i b , base current (ma) 0.05 1.0 0 npn 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v ce , collector-emitter voltage (volts) 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 t j = 25 c i c = 10 ma i c = 100 ma i c = 500 ma i c = 2.0 a -10 -4.0 -2.0 -1.0 -0.5 -0.2 -0.1 -0.02 -0.01 -1.0 -2.0 -5.0 -10 -20 -50 -100 100 m s 1.0 ms t a = 25 c t c = 25 c mps75 0 mps75 1 wire limit thermal limit second breakdown limit -0.05 v ce , collector-emitter voltage (volts) pnp i b , base current (ma) pnp figure 6. mps750, mps751 collector saturation region v ce , collector-emitter voltage (volts) t j = 25 c i c = -10 ma i c = -100 ma i c = -500 ma i c = -2.0 a -0.05 -1.0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 10 4.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 i c , collector current 1.0 2.0 5.0 10 20 50 100 v ce , collector-emitter voltage (volts) figure 7. mps650, mps651 soa, safe operating area t a = 25 c 1.0 ms t c = 25 c 100 m s mps65 0 mps65 1 wire limit thermal limit second breakdown limit figure 8. mps750, mps751 soa, safe operating area npn
npn mps650 mps651 pnp mps750 mps751 http://onsemi.com 5 package dimensions case 2910 issue al to92 (to226) c r n n 1 j section xx d 23 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimensions d and j apply between l and k mimimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p l f b k g h xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.44 5.21 b 0.290 0.310 7.37 7.87 c 0.125 0.165 3.18 4.19 d 0.018 0.021 0.457 0.533 f 0.016 0.019 0.407 0.482 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.018 0.024 0.46 0.61 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.135 --- 3.43 --- style 1: pin 1. emitter 2. base 3. collector
npn mps650 mps651 pnp mps750 mps751 http://onsemi.com 6 notes
npn mps650 mps651 pnp mps750 mps751 http://onsemi.com 7 notes
npn mps650 mps651 pnp mps750 mps751 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mps650/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
